如何寻找最合适的音频放大器

发布网友发布时间：2022-04-20 10:27

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热心网友时间：2022-04-24 17:57

1 2 3 �0�8 2007 National Semiconctor Corporation BOOMER �0�3 BOOMER �0�3 (V, I) microSMD LLP microSMDxt microArray 4 Boomer s 5 �0�8 2007 National Semiconctor Corporation : �6�1�6�1 LM489X LM49XX / �6�1�6�1�6�1–– , C B Boomer 6 �0�8 2007 National Semiconctor Corporation 输出 LM4892 GSM HP LM4897 / �6�1 217 Hz VDD = 5V 8 PSRR 62 dB �6�1 5.0V 1% THD 1W( ) �6�1 3.3V 1% THD 400 mW �6�1 0.1 uA ( ) �6�1 BTL 500 pF �6�1“ / ”�6�1 2.2 - 5.5V �6�1�6�1�6�1 5V 3V 217 Hz , PSRR 62 dB ( ) �6�1 5V THD+N = 1% 1.1W �6�1 3V THD+N = 1% 350 mW( ) �6�1 0.1 uA �6�1�6�1 / �6�1 BTL 100 pF �6�1 2.6V - 5.5V �6�1 SO Boomer �0�3 - 7 �0�8 2007 National Semiconctor Corporation �6�1�6�1�6�1�6�1�6�1�6�1 LD 3 x 3 mm LQ 2 x 2 mm �6�1�6�1�6�1�6�1�6�1�6�1�6�1 LM4905 Boomer LM4906 Boomer Boomer �0�3 - 1W PSRR “” 8 �0�8 2007 National Semiconctor Corporation �6�1 PSSR = 75 dB �6�1 IddQ 1.7 mA �6�1 2.4 5.5V �6�1 5V 8 1% THD 1.3 W �6�1 3.6V 8 1% THD 610 mW �6�1 0.4 mm uSMD (1.22 x 1.22 mm) LLP (3 x 3 mm) LM4995 1.3W Boomer �0�3 - 1.3W PSRR “ / ” 9 �0�8 2007 National Semiconctor Corporation �6�1 5V 8 , 1% THD 1W �6�1 3.3V , 8 , 1% THD 400 mW �6�1 2.4 5.5V �6�1 PSRR: 83 dB �6�1�6�1�6�1 MSOP (MM), microSMD (1.5 x 1.5 mm, ITL) LLP (4 x 3 mm LD) LM4898 LM4923LQ �6�1 5V 8 , 1% THD 1.1W �6�1 3.3V , 8 , 1% THD 400 mW �6�1 2.4 5.5V �6�1 PSRR: 85 dB �6�1�6�1�6�1 2 x 2 mm 8 pin LLP (LQ) �6�1 5V , 4 , 10% THD 2.5W �6�1 5V , 4 , 1% THD 2.1W �6�1 5V , 8 , 1% THD 1.3W �6�1 3.3V , 8 , 1 %THD 550 mW �6�1 2.4 5.5V �6�1 PSRR: 85 dB �6�1 2.2m Iddq, 0.1 uA Isd �6�1�6�1�6�1 3 x 3 mm 8 pin LLP(SD) LM4927SD �0�3 - 10 �0�8 2007 National Semiconctor Corporation �6�1 PSSR = 95 dB �6�1 IddQ 1.7 mA �6�1 2.4 5.5V �6�1 5V , 8 , 1% THD 1.25W �6�1 3.3V , 8 , 1% THD 550 mW �6�1 RF �6�1�6�1�6�1 0.4 mm uSMD (1.25 x 1.25 mm) LM4941 1.25W Boomer �0�3 - LM4941 11 �0�8 2007 National Semiconctor Corporation �6�1 P o (8 ) - 5V: 1.2W, 3.6V: 600 mW �6�1 I DDQ - 5V: 2.6 mA, 3.6V: 2.1 mA �6�1 THD+N (P o =100 mW) - 5V: 0.06%, 3.6V: 0.04% �6�1 PSRR (217 Hz): 78 dB �6�1 SD V IL = 0.4V, V IH = 1.4V �6�1 D �6�1�6�1�6�1�6�1 0.4 mm 1.4 x 1.4 mm 9-bump micro SMD �6�1 0.5 mm LLP �6�1 PDA SD 3 x 3 mm TM 1.37 x 1.37 mm 0.4 mm pitch LM4673 Boomer �0�3 2.65W D 12 �0�8 2007 National Semiconctor Corporation �6�1 EMI – RF – FCC CE �6�1–– 13 �0�8 2007 National Semiconctor Corporation �6�1 D – ( : 300 kHz) –�6�1 EMI �6�1�6�1 D –�6�1�6�1 14 �0�8 2007 National Semiconctor Corporation �6�1 1 FCC B �6�1 FCC �6�1 2 2 1: LM4675 EMI EMI 15 �0�8 2007 National Semiconctor Corporation 400 mW 8 ohm Vdd=3.6V 89% 100 mW 8 ohm Vdd=3.6V 80% 3.6V 1.3W 5V 1% THD 650 mW I DDQ - 5V: 2.8 mA, 3.6V: 2.2 mA THD+N (P o =100 mW) - 5V: 0.03%, 3.6V: 0.02% PSRR (217 Hz): 82 dB EMI SD V IL = 0.4V, V IH = 1.4V D ( 17 uS) 0.5 mm 1.52 x 1.52 mm 9-bump micro SMD 0.5 mm 3 x 3 mm LLP PDA SD 3 x 3 mm —6 in LM4675 Boomer �0�3 2.7W EMI D 16 Boost ed Boomer s 17 �0�8 2007 National Semiconctor Corporation �6�1 LM4804SQ: – 8 Ohm , 2% THD, 3V 4.6V 1.7W �6�1 LM4805SQ: – 8 Ohm , 2% THD, 3V 4.6V 1.0W �6�1 2.7 4.6V �6�1 2 uA ( ) �6�1 / �6�1�6�1�6�1 SQ 5 x 5 mm LLP LM4804/05 Boomer �0�3 PTT 3V 1.7W /1W 18 �0�8 2007 National Semiconctor Corporation �6�1 6 mA �6�1 Vdd = 3.3V, RL = 8 , PV1 = 5.0V 1.2W �6�1 0.01 uA �6�1 76% �6�1 D �6�1 2.7V - 5.0V (VDD) �6�1 D �6�1 17 s �6�1 Boost �6�1 16 LLP (3 x 4 mm) LM48510 Boomer �0�3 1.2W Boost ed D 19 �0�8 2007 National Semiconctor Corporation �6�1 VDD = 3.2V, THD 1% 15.7 VP-P �6�1 VDD = 5V 7.mA IDDQ + �6�1 f = 217 Hz 80 dB ) �6�1�6�1�6�1�6�1�6�1�6�1 12 uSMD (1.5 x 2 mm) LM48555 Boomer �0�3 20 �0�8 2007 National Semiconctor Corporation LM4802B �6�1 2.7 5.5V �6�1 30O hm + 2 uF BTL �6�1 2 uA( ) �6�1 / �6�1�6�1�6�1 SQ 5 x 5 mm LLP VO1 VO2 Vin2 Bypass S/D2 S/D1 GND Vdd SW FB Vamp GND S/D 20k 200k 82p 0.039uF Audio In 0.22uF 4.7uF L1 10uH 4.7uF 13.3k 73.2k 4.7uF 390pF Vdd 150k Vin1 4.7 4.7 Ceramic Speaker LM4960 �6�1 3.0 4.2V �6�1 (Vamp) 15V �6�1 BTL O/P 10 Vrms 28 Vpp �6�1 1.6 MHz ( ) �6�1 / �6�1�6�1�6�1 SQ 5 x 5 mm LLP LM4961/62 �6�1 3 - 5V �6�1 (Vamp) 2.7 - 9V �6�1 15 Vp-p, BTL �6�1––�6�1 / �6�1�6�1�6�1 SQ 5 x 5 mm LLP �6�1 LM4961 microSMD Boost ed Boomer �0�3 21 �0�8 2007 National Semiconctor Corporation = 2.7V 9.0V 1% THD+N, Vdd (Vbat) = 3.2V 15 Vp-p BTL, R L = 2 mF+30W, f = 1 kHz Iddq, Boosted = 10 mA Iddq, = 3 mA MUX – / LM4962 LM4951 micro SMD -20 (2.5 x 2.5) LM4951 micro SMD-9 (1.5 x 1.5 mm) – 10 LM4951 LLP-10 (4 x 4 mm) – PDA LM4962TL Boomer �0�3 22 23 �0�8 2007 National Semiconctor Corporation 5V 3.3V NS LM4809 2.0-5.5V 70mW,0.1% 28mW, 0.1% 低活动的低断电模式 M, MM & LD LM4811 2.0-5.5V 70mW,0.1% 28mW, 0.1% 高数字音量控制 MM & LD LM4809 LM4811 Boomer 24 �0�8 2007 National Semiconctor Corporation NS PSRR @ 217Hz LM4910 2.2-5.5V 30mW, 0.1% 65dB NA 虚地型无输出电容 M & MM LM4911 1.8-5.5V 25mW, 0.1% 65dB 超快的启动功能 , 虚地型无输出电容 MM LM4924 1.5 ~3.6V 40mW,1% THD @ 3V, 16Ohm 66dB 虚地型无输出电容 , 15uV( ) MSOP10 LM4925 1.5 ~3.6V Stereo SE O/P :40mW,1% THD @ 3V, 16Ohm , Mono BTL O/P : 410mW, 1%THD @3V, 8Ohm 70dB @100Hz SE/BTL 可选输出 MM, LLP LM4929 1.8 ~ 5.5V 40mW,1% THD @ 3V, 16Ohm 65dB NA 虚地型无输出电容, 超低噪声 15uV(典型值) MSOP10 LM4980 1.5 ~3.3V 42mW, 1% THD @3V 16Ohm 100dB NA , 虚地型 , LLP LM4985 2.3 ~5.5V 68mW, 1% THD @3V 16Ohm 77dB NA I2C , 虚地型 , OCL/Cap 耦合可选型 0.4mm microSMD LM4929 LM4910 LM4911,4924 LM4925 BTL SE LM4980 LM4985 Boomer ( , SE 25 �0�8 2007 National Semiconctor Corporation �6�1 2.3V 5.5V �6�1 OCL ( ) �6�1 I 2 C �6�1 0.4 mm micro SMD – (1.22 x 1.62 x 0.6 mm) �6�1 : –76 dB +18 dB �6�1�6�1 LM4985TM Boomer (OCL) (I 2 C 26 �0�8 2007 National Semiconctor Corporation Charge Pump Digital Volume Control �6�1 P o = 83 mW (V DD = 3V, R L = 16 ) �6�1 PSRR = 67 dB (217 Hz) �6�1 70 dB (1 kHz, ) �6�1 = 1.6V 4.2V �6�1 IDD 2 mA ( ) �6�1 16 / �6�1 -33 dB +12 dB �6�1�6�1�6�1 ( / ) �6�1 Non-pullback 16 LLP �6�1 PDA MP3 ! LM4981SQ Boomer �0�3 - 27 �0�8 2007 National Semiconctor Corporation �6�1 P o = 80 mW (V DD = 3V, R L = 16 ) �6�1 = 1.6V 4.0V �6�1 I 2 C �6�1�6�1 HP �6�1 HP SD �6�1�6�1�6�1�6�1 2 x 2 mm, 16 bump micro SMD �6�1 PDA MP3 ! Charge Pump I2C Control Interface LM4982TL Boomer �0�3 - 28 29 �0�8 2007 National Semiconctor Corporation �6�1 5V , 8 , 1% THD 1.07W x2 �6�1 3.3V , 8 , 1% THD 400 mWx2 �6�1 2.2 5.5V �6�1 217 Hz & 1 KHz PSRR 64 dB �6�1 ( Iq = 0.2 uA) �6�1 / �6�1�6�1�6�1�6�1 LLP-14 LM4992LD Boomer �0�3 1W PSRR 30 �0�8 2007 National Semiconctor Corporation �6�1 5V , 8 , 1 % THD 1.1W �6�1 3.3V , 8 , 1% THD 375 mW �6�1 2.4 5.5V �6�1 PSRR: 93 dB �6�1 RF �6�1�6�1�6�1 3 x 4 mm 14 LLP (SD 16 bump microSMD Shutdown Ri Ri Rf Rf Shutdown Ri Ri Rf Rf + SD BYP Bias -L Input +L Input -R Input +R Input N E W ! LM4928 Boomer �0�3带 31 �0�8 2007 National Semiconctor Corporation �6�1 3.6V, 100 mW 8 80%( ) �6�1 3.6V, 400 mW 8 83% ( ) �6�1 5V, 1W 8 83% ( ) �6�1 500 mW 8 Ohm THD 0.15% ( ) �6�1 ( 10% THD): �6�1 : 0.5 mS ( ) �6�1 : 6/12/18/24 dB ( ) �6�1 3.6V 3.65 mA ( ) �6�1 0.1 uA ( ) �6�1 2.4V 5.5V �6�1 PWM �6�1�6�1�6�1�6�1 / �6�1 2 x 2 mm microSMD �6�1 0.5 mm LLP LM4674 /SDR /SDL GAIN0 GAIN1 INR+ INL+ INR- INL- OUTRA OUTRB OUTLA OUTLB V DD PV DD GND PGND 2.4V to 5.5V LM4926 SHUTDOWN CONTROL GAIN CONTROL 8 Ohm 4 Ohm 290 mW 420 mW 2.5V 700 mW 1.1W 3.6V 1.6W 2.4W 5V LM4674 32 �0�8 2007 National Semiconctor Corporation �6�1 3.6V 100 mW 8 85% ( ) �6�1 5V 1W 8 86%( ) �6�1 3.6V , 4 mA �6�1 Vdd = 5V, RL = 4 , THD 10% , 2.3W ( ) �6�1 Vdd = 5V, RL = 8 , THD 10% , 1.5W ( ) �6�1 EMI �6�1�6�1 D �6�1 3D �6�1�6�1�6�1 / �6�1�6�1 4 x 4 mm LLP �6�1 PDA LM48410 Boomer �0�3 3D EMI 2.3W D 33 34 �0�8 2007 National Semiconctor Corporation �6�1 5V, R L = 3 , 1% THD 2.4W �6�1 5V, R L = 4 , 1% THD 2.1W �6�1 5V, R L = 8 , 1% THD 1.1W �6�1 75 mW 32 THD+N 0.01% �6�1 0.04 uA �6�1 217 Hz PSRR 85 dB �6�1 2.0V - 5.5V �6�1 3D �6�1�6�1 LLP (SQ) LM4888 2.1W 3D 35 �0�8 2007 National Semiconctor Corporation �6�1 3.3V, R L =8 , 1% THD 500 mW �6�1 3.3V, R L =32 , 0.5% THD 25 mW �6�1�6�1 3D �6�1 I 2 C/SPI �6�1 32 (-54 dB +18 dB) �6�1�6�1�6�1 7 LM4846 �6�1 / �6�1�6�1 0.1 uA �6�1 microSMD LM4845 / LM4846 3D 36 �0�8 2007 National Semiconctor Corporation �6�1�6�1�6�1�6�1�6�1�6�1�6�1�6�1�6�1�6�1�6�1�6�1�6�1�6�1�6�1 8Ω MONO+ MONO- R OUT 32Ω Handsfree Speaker AUDIO INPUT AUDIO INPUT 0.22 μF + C IN 1 Mixer & Output Mode Select I 2 C/SPI Interface 6dB I 2 CSPI_V DD SDA SCL ID_ENB I 2 CSPI_SEL R IN L IN 0dB National 3D L OUT 32Ω 0dB 0dB + 1μF C S V DD Bias 2.2 μF + C B Bypass L H P 3 D 1 L H P 3 D 2 R H P 3 D 1 R H P 3 D 2 C 3DR C 3DL Volume Control -54dB to +18dB MONO_IN+ MONO_IN- + - Volume Control -54dB to +18dB Volume Control -54dB to +18dB -6dB V OC 0.22 μF + C IN 2 0.22 μF + C IN 3 0.22 μF + C IN 4 LM4946 3D 37 �0�8 2007 National Semiconctor Corporation LM4947 3D D �6�1 1W 5V , R L = 8 1W 80% �6�1 5V , R L = 32 , 1% THD 80 mW �6�1�6�1�6�1 D �6�1 OCL/CC �6�1�6�1 I 2 C �6�1 3D �6�1 32 �6�1 3 (L/R/Mono) �6�1�6�1�6�1 / �6�1�6�1 25 bump �0�8SMD 38 �0�8 2007 National Semiconctor Corporation LM4949 OCL D Mixer & Mode Select Mono Input -59dB - +18dB Left Input -59dB - +18dB Right Input -59dB - +18dB Bias Click/Pop Suppresion I2C Interface 0dB - +6dB -12dB - 0dB -12dB - 0dB I2C BUS V IH V IL 0dB - +6dB C IN C IN C IN C IN C IN C IN C B C S C S C S V DD HPV DD I2CV DD MIN+ MIN- LIN+ LIN- RIN+ RIN- BYPASS I2CVDD SDA SCL ADR GND HPGND VDDHP VOC HPR HPL GNDLS RLS- RLS+ LLS- LLS+ VDDLS VDDLS VDD Audio Input Audio Input Audio Input �6�1 5V, R L = 8 , 1W, 80% �6�1 5V, R L = 32 , 1% THD , 80 mW �6�1�6�1�6�1 D �6�1 OCL/CC �6�1�6�1 I 2 C �6�1 32 �6�1 3 (L/R/Mono) �6�1�6�1�6�1 / �6�1�6�1 25 bump �0�8SMD 39 �0�8 2007 National Semiconctor Corporation �6�1 5V, R L = 4 2W, 80% �6�1 5V, R L = 32 , 1% THD 80 mW �6�1 217 Hz PSRR 72 dB �6�1�6�1�6�1 D �6�1 OCL/CC �6�1 I 2 C �6�1 3D �6�1 32 spk HP �6�1�6�1 / �6�1�6�1 28 LLP LM49270 OC 3D D 40 �0�8 2007 National Semiconctor Corporation �6�1 18 44.1 KHz 48 KHz I 2 S DAC �6�1 16 8 KHz PCM �6�1 I 2 C SPI �6�1 PLL �6�1 25 mW/ch �6�1 450 mW/3.3V 8 D �6�1 32 , 1.5 dB/ �6�1�6�1�6�1 16 2 dB/ �6�1 GPIO/ �6�1 : 2 uA ( ) �6�1 36 bump microSMD LM4931 Boomer �0�3 PLL D 16 41 �0�8 2007 National Semiconctor Corporation LM4937 Boomer �0�3–––– 42 �0�8 2007 National Semiconctor Corporation LM4937 Boomer �0�3�6�1 P o = 1.2W (AV DD = 5V, 8 ) �6�1 P o = 80 mW(AV DD = 5V, 32 SE) �6�1 P o = 175 mW(AV DD = 5V, 32 BTL) �6�1 = 1.6 A �6�1 18 44.1 kHz 48 kHz I 2 S DAC �6�1 I 2 C/SPI �6�1 4 I 2 C �6�1 / PLL �6�1 PLL 10 - 20 MHz �6�1 OCL SE �6�1 SE �6�1 36 bump micro SMD (3.2 x 3.5mm) �6�1 PDA �6�1 3.2 mm 3.5 mm A B C D E F 6 5 4 3 2 1 43 �0�8 2007 National Semiconctor Corporation 3D 3D AB AB AB AB AB AB AB AB I 2 C/SPI / MCLK PLL_OUT PLL PLL_IN V DD /2 , AB I 2 S DAC I2S_CLK I2S_WS I2S_SDI LM4934 Boomer �0�3 44 �0�8 2007 National Semiconctor Corporation �6�1 Po = 1.1W (VDD = 5V, 8W) �6�1 Po = 60W (VDD = 5V, 32W, SE) �6�1 Po = 85 mW(VDD = 5V, 32W, BTL) �6�1 = 1 mA �6�1 18 , 44.1 kHz 48 kHz I 2 S DAC �6�1 5 tapping FIR �6�1 3D �6�1 I 2 C/SPI �6�1 3 I 2 C �6�1 PLL : PLL 10 - 20 MHz �6�1 OCL �6�1 42 microSMDxt (3.3 x 3.8 mm) �6�1 PDA LM4934 �0�3 I 2 S DAC 45 �0�8 2007 National Semiconctor Corporation I 2 S / PCM 兼容性 AUX_L AB D AB AB AB AB VREF_FLT BG AUX_OUT EP_OUT LS_OUT HPL_OUT HPR_OUT BYPASS HP_VMID CP_OUT CP_IN INT_MIC EXT_MIC INT_BIAS EXT_BIAS AUX_R L E F T R I G H T C P I 侧音 MIC G 7 . 1 1 数字音频接口 CLK WS SDI SDO VSAR2 VSAR1 D_V DD /2 A_V DD /2 GPIO1 GPIO2 SCL/SCK SDA/SDI TEST_MODE MIC_DET IRQ HP_VMIDFB 寄存器 MCLK PLL_FLT -46.5dB to 12dB -34.5dB to 12dB 6dB to 36dB 0dB to -30dB SPI_MODE BB_V DD ADC 时钟和ΣΔ PLL BB_V DD D_V DD 电平移动二极管电源管理与控制 I 2 C/SPI SLAVE DAC SAR ADC 数字增益控制 DC 音量控制放大器集团和检测麦克风偏置和检测 GPIO1 8 LM4671 8 L R VGND 32 32 RF 模块 32 LM4935 Boomer �0�3 46 �0�8 2007 National Semiconctor Corporation LM4935 Boomer �0�3 3.93 mm 3.93 mm �6�1– P o = 570 mW(V DD = 3.3V, 8 ) – SNR ( ) = 95 dB – = 1.1 A �6�1– Aux – PCM/I 2 S – / I 2 C SPI – OCL – AGC – RF CPI/CPO – D – 18 DAC 16 ADC 4 12 SAR ADC �6�1– 49 microSMDxt (3.93 x 3.93 mm) �6�1– PDAs DVD/CD/AAC/MP3 / 47 �0�8 2007 National Semiconctor Corporation I 2 S / PCM AUX_L AB D AB AB AB AB VREF_FLT BG AUX_OUT EP_OUT LS_OUT HPL_OUT HPR_OUT BYPASS HP_VMID CP_OUT CP_IN INT_MIC EXT_MIC INT_BIAS EXT_BIAS AUX_R L E F T R I G H T C P I S I D E T O N E MIC G 7 . 1 1 P C M I 2 S I2SCLK I2SWS I2SSDI I2SSDO GPIO1 GPIO2 SCL/SCK SDA/SDI TEST_MODE MIC_DET IRQ HP_VMIDFB MCLK PLL_FLT -46.5dB 至 12dB -34.5dB to 12dB 6dB to 36dB 0dB to -30dB SPI_MODE ADC PLL BB_V DD D_V DD I 2 C/SPI DAC AMP BIAS & DET MIC BIAS & DET GPIO1 8 LM4676 8 L R VGND 32 32 RF MODULE 32 LM49370 Boomer �0�3 PCMCLK PCMWS PCMSDI PCMSDO 48 �0�8 2007 National Semiconctor Corporation LM49370 Boomer �0�3 3.93 mm 3.93 mm �6�1– P o = 570 mW(V DD = 3.3V, 8 ) – SNR ( ) = 95 dB – = 1.1 A �6�1– Aux – PCM – I 2 S �6�1 PCM �6�1 I 2 S – / I 2 C SPI – OCL – AGC – RF CPI/CPO – D speaker amp & – 18 DAC 16 ADC �6�1– 49 microSMDxt (3.93 x 3.93 mm) �6�1– PDA 2007 1 49 �0�8 2007 National Semiconctor Corporation LM4934RL LM4935RL I 2 S DAC, I 2 C/SPI, FIR, OCL , HP Spkrs, 3D D spkr I 2 S , I 2 C/SPI, OCL , HP Spkrs, 3D , 2 GPIO, 2 AGC , CPI/CPO, 16 . LM4931ITL LM4930ITL LM4921ITL LM4937TL I 2 S DAC, I2C/SPI, FIR, OCL , HP Spkrs, 3D LM49370RL I 2 S PCM D spkr I 2 S , I 2 C/SPI, OCL , , 3D , 2 GPIO, 2 AGC , CPI/CPO, 16 D AB Boomer �0�3 50 �0�8 2007 National Semiconctor Corporation LM4888SQ LM4859TL/SP LM4857TL/SP LM4844TL LM4845/6TL HP, Spkrs, 3D, , I 2 C SE HP, Spkrs, , , I 2 C, 3D Spkrs, HP, I 2 C, OCL, 3D, HP Spkr, 3D, LM4856ITL/LQ LM4855ITL LM4852ITL/LQ LM4851ITL Spkr, , HP, I 2 C/SPI, OCL, 3D LM4946SQ Spkr, HP, I 2 C/SPI, OCL, 3D LM4947TL LM4949TL HP, D Spkrs, 3D, , I 2 C, SE HP, D Spkrs, , I 2 C, D AB Class LM49270SQ HP, D Spkrs, OCL, I 2 C, 3D Boomer �0�3 51 LED SE 52 �0�8 2007 National Semiconctor Corporation �6�1 LED �6�1 LED �6�1 LED �6�1 PWM �6�1�6�1�6�1 I 2 C �6�1 1 uA ( ) LED CURRENT CONTROL AUDIO SYNC FILTER I 2 C BUS SCL SDA ADR V I H V I L CONTROL INTERFACE PWM RANDOMIZER V DD V DD M IN L IN R IN FILT GND LGND LED1 LED2 LED3 I 2 CV DD I 2 CV DD LM4970 53 �0�8 2007 National Semiconctor Corporation �6�1 V DD = 3V 150 mA �6�1 5 ms �6�1 Work with Haptic �6�1 0.1 uA (typ.) �6�1 LLP ON OFF BIAS MOTOR CONTROL SIGNAL V DD GND /SD BYPASS IN+ IN- VO1 VO2 0.1μF LQ 2 x 2 mm LM4570 54 55 �0�8 2007 National Semiconctor Corporation LMV1012 LMV1015 LMV1007 2 to 5V 2 to 5V 1.5V to 5V <180uA <180uA <250uA 60dB 60dB 67dB -89dBV -89dBV -94dBV 0.09% 0.09% 0.19% -7/15/20/25 -7/15/20/25 -7/15/20/25 -40 to 85C -40 to 85C -40 to 85C 2.5KV HBD, 4 焊球 microSMD 采用 LDB 技术的 4 焊球 microSMD 采用 LDB 技术的 4 焊球 microSMD 封装 2.5KV HBD 2.5KV HBD �6�1 BigMic ( ) Bi gMi c 56 �0�8 2007 National Semiconctor Corporation LMV1031 LMV1032 2 to 5V 1.7 to 5V 60uA 60uA SNR ( ) 61dB 58dB ( ) -89dBV -97dB PSRR 70dB 84dB THD 0.13% 0.13% 170mVpp 300mV -15 -6/-15/-25 -40 至 85C -40 至 85C ESD 2.5KV HBD 2.5KV HBD 采用 LDB 技术的 4 个焊球的 microSMD 封装 1.13x 1.13x0.4mm microSMD �6�1 BigMic ( ) �6�1 ( ) Bi gMi c ( ) 3 57 �0�8 2007 National Semiconctor Corporation �6�1 I/O �6�1 HD MPC SNR �6�1 A/D �6�1 1 3.25 MHz �6�1�6�1�6�1 1.6 2.9V �6�1 58 dB ( ) SNR �6�1 -88 dB ( ) �6�1 300 mVpp �6�1 -4.4 dBFS �6�1 0.03% THD ( ) �6�1 600 uA ( ) �6�1 82 dB( ) PSRR �6�1 LMV1024: �6�1 LMV1026: �6�1 6 (0.4 mm) microSMD Bi gMi c LMV1024/2 58